1. Basic parameters of MOSFET
亚博提款要一倍流水ciss: input capacitance, ciss = cgd + cgs (cds short circuit).
亚博提款要一倍流水coss: output capacitance, coss = cds + cgd.
crss: reverse transmission capacitance, crss = cgd.
tr: rise time. time when the output voltage vds drops from 90% to its amplitude 10%.
亚博提款要一倍流水tf: fall time, the time when the output voltage vds rises from 10% to its amplitude 90%.
亚博提款要一倍流水td (on): on-delay time. the time from when the input voltage rises to the beginning of 10% until the vds drops to 90% of its amplitude.
td (off): turn-off delay time, the time from when the input voltage drops to 90% to when vds rises to its turn-off voltage.
qgd: gate drain charge (taking miller effect into account).
亚博提款要一倍流水qgs: grid-source charging capacity.
qg: total gate charge.
2. static parameters of MOSFET
亚博提款要一倍流水stg: storage temperature range.
亚博提款要一倍流水tj: maximum working junction temperature. it is usually 150 ℃ or 175 ℃, and the operating conditions of the device design must be to avoid exceeding this temperature, and leave a certain margin. (this parameter cannot be trusted)
亚博提款要一倍流水vgs: maximum gate-source voltage. , usually: -20v ~ + 20v
亚博提款要一倍流水pd: maximum dissipated power. it refers to the maximum drain-source dissipation power allowed when the performance of the fet is not deteriorated. when used, the actual power consumption of the fet should be less than pdsm and leave a certain margin. this parameter is generally derated as the junction temperature rises. (this parameter cannot be trusted)
亚博提款要一倍流水idm: maximum pulse drain-source current. this parameter is derated as the junction temperature increases.
亚博提款要一倍流水id: maximum drain-source current. it refers to the maximum current allowed between the drain and source during the normal operation of the fet. the operating current of the fet should not exceed the id. this parameter is derated as the junction temperature increases.
3. Dynamic parameters of MOSFET
igss: gate-source drive current or reverse current. due to the large mosfet input impedance, igss is usually in the nanoampere range.
亚博提款要一倍流水idss: full drain-source current, drain-source current when gate voltage vgs = 0 and vds is a certain value. usually on the microampere level.
亚博提款要一倍流水vgs (th): turn-on voltage (threshold voltage). when the applied gate control voltage vgs exceeds vgs (th), the surface inversion layers of the drain and source regions form a connected channel. in applications, the gate voltage when id is equal to 1 milliamp under the condition that the drain is short-circuited is often called the turn-on voltage. this parameter generally decreases as the junction temperature increases.
亚博提款要一倍流水rds (on): under the premise of specific vgs (generally 10v), junction temperature and drain current, the maximum impedance between drain and source when mosfet is on it is a very important parameter that determines the power consumption when the mosfet is turned on. this parameter usually increases with increasing junction temperature (positive temperature characteristics). therefore, the value of this parameter under the premise of the highest operating junction temperature should be used as the loss and pressure drop calculation.
亚博提款要一倍流水tj: temperature coefficient of drain-source breakdown voltage, usually 0.1v / ℃.
4. Avalanche breakdown characteristics of MOSFET
these parameters are indicators of the mosfet's ability to withstand overvoltage in the off state. if the voltage exceeds the drain-source limit voltage, the device will be in an avalanche state.
eas: single pulse avalanche breakdown energy. this is a limit parameter that indicates the maximum avalanche breakdown energy that the mosfet can withstand.
iar: avalanche current
ear: repeated avalanche breakdown energy
亚博提款要一倍流水5.internal diode parameters
is: continuous maximum freewheeling current (from source)
ism: pulse maximum freewheeling current (from source)
vsd: forward voltage drop
trr: reverse recovery time
qrr: reverse charging power
ton: forwarding time. (basically negligible)
6. Complete model parameters of commonly used MOSFET