on december 16, 2017, wu ling, chairman of the third-generation semiconductor industry technology innovation strategy alliance, said at the semiconductor development strategy seminar that 2018 is the key period for the third-generation semiconductor industrialization preparation. by 2025, the third-generation semiconductor devices will account for 50% of mobile communication and high-efficiency power management in china; the led general-purpose lighting market share will reach 80%, and the core device localization rate will reach 95%; the third-generation semiconductor devices will the scale application of new energy vehicles and consumer electronics.
亚博提款要一倍流水the third generation semiconductor is a wide band gap semiconductor material typified by gallium nitride and silicon carbide. at present, the performance improvement of first- and second-generation semiconductor technologies in the fields of optoelectronics, power electronics and radio frequency microwaves has approached the physical limits of materials, and it is difficult to support the sustainable development of next-generation information technology, and it is difficult to cope with energy and environment. severe challenges, difficult to meet the development of high-tech and its industry, there is an urgent need to develop a new generation of semiconductor technology.
亚博提款要一倍流水ji hua, deputy general manager of china micro-semiconductor, believes that the third-generation semiconductor industrialization needs to be considered from the entire industry chain, not only manufacturing and equipment, but also key components. at the same time, domestic equipment companies need to participate in global competition in order to achieve healthy and stable development.
wu ling also said that the timing of china's third-generation semiconductor innovation development has matured and is in an important window. however, it still faces multiple urgency. among them, the field of optoelectronic materials and devices is in a state of running compared with the international advanced level; power semiconductor materials and devices, rf materials and devices are in a state of running compared with the international advanced level. at present, nearly 10 companies in the world have commercial products, and infineon mass production devices will be launched on a large scale in 2018. in addition, there are problems such as weak industrial production lines and lack of technical teams.
jin zhangyu, chairman of ganzhao optoelectronics, said that the third-generation semiconductor has great potential in the market due to its wide bandgap, high thermal conduction band, high breakdown electric field and high radiation resistance. the company expects to absorb outstanding talents and r&d efforts in the front of the industry through investment and mergers and acquisitions.
亚博提款要一倍流水industrial securities believes that the third-generation semiconductor equipment industry will usher in a turning point in 2018. this round of investment is dominated by mainland chinese companies, and domestic equipment companies will enter the order and performance period. as a strategic emerging industry, the semiconductor industry will accelerate its technological breakthroughs and downstream investment, which will lead to rapid expansion of equipment demand.
in 2016, the state council issued the “13th five-year national science and technology innovation plan”, and released 6 major scientific and technological projects and 9 major projects for 2030. the third generation semiconductor is the composition of major projects of “key new materials development and application”. section. in the same year, the state council established the national new materials industry development leading group to implement the strategy of manufacturing a strong country and accelerate the development of new materials industry.